DocumentCode
2810409
Title
Double-gap vircator operation at sub-microsecond pulse duration
Author
Shlapakovski, Anatoli ; Kweller, T. ; Hadas, Y. ; Krasik, Ya E. ; Polevin, S. ; Kurkan, I.
Author_Institution
Phys. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
fYear
2009
fDate
28-30 April 2009
Firstpage
66
Lastpage
67
Abstract
The double-gap S-band vircator operation has been investigated at sub-microsecond duration of the high-current electron beam generated in a planar diode. This version of vircator (see Fig. 1), although driven by a high-current (ges10 kA) relativistic electron beam, nevertheless allows both relatively efficient microwave generation and also radiation frequency stability, due to the use of a single-mode two-section rectangular RF cavity. The double-gap vircator powered by the accelerator SINUS-7 (1 MV, 20 kA, 50 ns) demonstrated ~1GW peak power of microwave radiation in the S-band at ~25 ns pulse length with ~5% efficiency [1]. Earlier experiments with longer driving beam pulses [2] at the voltages close to those of [1] confirmed the constancy of the radiation frequency, as determined by the cavity, during the pulse. However, the microwave pulse was significantly shortened (< 100 ns) as compared to the accelerating voltage pulse that was explained by electron and ion emission from the plasma formed on the cavity walls leading to absorption of the microwave energy. In this work, we present the results of the experiments performed at moderate accelerating voltages, <550 kV, and longer pulse durations, ~500 ns.
Keywords
cathodes; electron accelerators; electron beams; electron emission; oscillators; vircators; SINUS-7 accelerator; double gap vircator operation; high current electron beam; planar diode; relativistic electron beam; single mode two section rectangular RF cavity; submicrosecond pulse duration; time 500 ns; voltage 550 kV; Acceleration; Diodes; Electron beams; Electron emission; High power microwave generation; Ion emission; Microwave generation; Radio frequency; Stability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2009. IVEC '09. IEEE International
Conference_Location
Rome
Print_ISBN
978-1-4244-3500-5
Electronic_ISBN
978-1-4244-3501-2
Type
conf
DOI
10.1109/IVELEC.2009.5193360
Filename
5193360
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