Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers

Author

Furuya, A. ; Anayama, C. ; Kondo, M. ; Kito, Y. ; Sugano, M. ; Sudo, H. ; Domen, K. ; Tanahashi, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

207

Lastpage

208

Abstract

Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15°C-50°C) and 120 K (60°C-90°C) in optimized laser

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optimisation; quantum well lasers; 120 K; 15 to 50 C; 179 K; 60 to 90 C; AlGaInP; AlGaInP strained multiquantum well lasers; GaInAsP; GaInAsP well layers; characteristic temperature; good characteristic temperature; optimized laser; oscillation wavelength; strained multiquantum well AlGaInP visible lasers; threshold current; well thickness; Capacitive sensors; Laboratories; Optical materials; Optical saturation; Power lasers; Quantum well devices; Quantum well lasers; Solid state circuits; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519337

Filename

519337