Title :
Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers
Author :
Furuya, A. ; Anayama, C. ; Kondo, M. ; Kito, Y. ; Sugano, M. ; Sudo, H. ; Domen, K. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15°C-50°C) and 120 K (60°C-90°C) in optimized laser
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optimisation; quantum well lasers; 120 K; 15 to 50 C; 179 K; 60 to 90 C; AlGaInP; AlGaInP strained multiquantum well lasers; GaInAsP; GaInAsP well layers; characteristic temperature; good characteristic temperature; optimized laser; oscillation wavelength; strained multiquantum well AlGaInP visible lasers; threshold current; well thickness; Capacitive sensors; Laboratories; Optical materials; Optical saturation; Power lasers; Quantum well devices; Quantum well lasers; Solid state circuits; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519337
