Multilayer passive components for uniplanar Si/SiGe MMICs

Author

Gokdemir, T. ; Karacaoglu, U. ; Budimir, D. ; Economides, S.B. ; Khalid, A. ; Rezazadeh, A.A. ; Robertoson, J.D.

Author_Institution

Dept. of Electron. & Electr. Eng., King´s Coll., London, UK

fYear

1997

fDate

10-10 June 1997

Firstpage

233

Lastpage

236

Abstract

This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.

Keywords

Ge-Si alloys; MMIC; elemental semiconductors; integrated circuit technology; semiconductor materials; silicon; CPW; SOI bonded technology; Si-SiGe; Si/SiGe uniplanar MMIC; TFMS transmission line; capacitor; coupler; fabrication; high resistivity silicon substrate; inductor; multilayer passive component; planar transformer; polyimide layer; silicon dioxide; Bonding; Conductivity; Coplanar waveguides; Germanium silicon alloys; MMICs; Nonhomogeneous media; Planar transmission lines; Polyimides; Silicon compounds; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598795

Filename

598795