Title :
Multilayer passive components for uniplanar Si/SiGe MMICs
Author :
Gokdemir, T. ; Karacaoglu, U. ; Budimir, D. ; Economides, S.B. ; Khalid, A. ; Rezazadeh, A.A. ; Robertoson, J.D.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll., London, UK
Abstract :
This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.
Keywords :
Ge-Si alloys; MMIC; elemental semiconductors; integrated circuit technology; semiconductor materials; silicon; CPW; SOI bonded technology; Si-SiGe; Si/SiGe uniplanar MMIC; TFMS transmission line; capacitor; coupler; fabrication; high resistivity silicon substrate; inductor; multilayer passive component; planar transformer; polyimide layer; silicon dioxide; Bonding; Conductivity; Coplanar waveguides; Germanium silicon alloys; MMICs; Nonhomogeneous media; Planar transmission lines; Polyimides; Silicon compounds; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598795
