DocumentCode
2810789
Title
Latch-up windows tests in high temperature range
Author
Nikiforov, A.Y. ; Bykov, V.V. ; Figurov, V.S. ; Chumakov, A.I. ; Skorobogatov, P.K. ; Telets, V.A.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
1997
fDate
15-19 Sep 1997
Firstpage
366
Lastpage
370
Abstract
CMOS IC dose rate latch-up was investigated within 10 to 100°C temperature range with pulsed laser simulator and flash X-ray machine. Devices were latch-up free at room temperature while either permanent latch-up or latch-up windows were detected in the range above 40°C. The phenomenon analysis is performed
Keywords
CMOS integrated circuits; X-ray effects; high-temperature electronics; integrated circuit testing; laser beam effects; 10 to 100 C; CMOS IC; dose rate; flash X-ray machine; high temperature; latch-up windows test; pulsed laser simulator; CMOS integrated circuits; Integrated circuit testing; Logic testing; Optical pulses; Performance evaluation; Pulse measurements; Pulsed power supplies; Semiconductor lasers; Temperature distribution; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698940
Filename
698940
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