DocumentCode
2810934
Title
Laser simulation adequacy of dose rate latch-up
Author
Skorobogatov, P.K. ; Nikiforov, A.Y. ; Ahabaev, B.A.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
1997
fDate
15-19 Sep 1997
Firstpage
371
Lastpage
375
Abstract
2D-numerical joint solution of the optical equations and fundamental system of equations was performed to check the adequacy of laser simulation in application to dose rate latch-up. The influence of shadowing and high intensity effects was analysed. The simulation adequacy was verified comparative simulation to radiation tests
Keywords
CMOS integrated circuits; integrated circuit testing; laser beam effects; 2D numerical model; CMOS IC; dose rate latch-up; laser simulation; radiation testing; CMOS integrated circuits; Circuit simulation; Circuit testing; Doping; Impurities; Laser modes; Optical pulses; Poisson equations; Semiconductor lasers; Shadow mapping;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698941
Filename
698941
Link To Document