DocumentCode
2810948
Title
Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz
Author
Hilborn, I. ; Freundorfer, A.P. ; Show, J. ; Keller, M.G.
Author_Institution
Queen´´s Univ., Kingston
fYear
2007
fDate
22-26 April 2007
Firstpage
671
Lastpage
674
Abstract
This paper outlines the design of a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in GaAs MESFET that had the dielectric resonator (DR) mounted on chip. The measured output power was 6.5 dBm with a frequency of 25.91 GHz. We present here for the first time the simulated results of 6.3 dBm at 26.01 GHz which compares well with the measured results. The calculated DC-RF efficiency was 3.4%. The phase noise at 1 MHz from the carrier frequency was determined to be -122 dBc.
Keywords
III-V semiconductors; MESFET integrated circuits; arsenic compounds; dielectric resonator oscillators; gallium compounds; integrated circuit design; microwave oscillators; GaAs; MESFET dielectric resonator oscillator; frequency 1 MHz; frequency 26 GHz; microwave oscillators; phase noise; single chip design; Dielectric measurements; Frequency measurement; Gallium arsenide; MESFETs; Oscillators; Phase noise; Power generation; Power measurement; Semiconductor device measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on
Conference_Location
Vancouver, BC
ISSN
0840-7789
Print_ISBN
1-4244-1020-7
Electronic_ISBN
0840-7789
Type
conf
DOI
10.1109/CCECE.2007.172
Filename
4232831
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