Title :
1.5 μm InGaAsP/InP multi-gain-levered-MQW-DFB-LD with high efficiency and large bandwidth FM response
Author :
Shim, Jong-In ; Yamazaki, Hiroshi ; Kamaguchi, M. ; Kitamura, Mitsuhiro
Author_Institution :
Dept. of Electron. Eng., Hanyang Univ., Ansan, South Korea
Abstract :
We have proposed and fabricated 1.5 μm MGL-MQW-DFB-LD grown by MOVPE selective epitaxy. High and flat FM efficiency value of 10 GHz/mA was realized up to 2 GHz modulation frequency by introducing a new concept of multi-gain-levering effect
Keywords :
III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; indium compounds; laser transitions; optical modulation; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.5 mum; 2 GHz; InGaAsP-InP; InGaAsP/InP multi-gain-levered-MQW-DFB-LD; MOVPE selective epitaxy; flat FM efficiency value; high FM efficiency value; high efficiency; large bandwidth FM response; modulation frequency; Bandwidth; Current measurement; Electrodes; Epitaxial growth; Epitaxial layers; Frequency modulation; Frequency shift keying; Indium phosphide; Laser modes; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519339
