DocumentCode :
2811042
Title :
GaN transistors — Giving new life to Moore´s Law
Author :
Lidow, Alex
Author_Institution :
Efficient Power Conversion Corp., El Segundo, CA, USA
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
1
Lastpage :
6
Abstract :
Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this paper, we discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore´s Law is alive and well in the world of power semiconductor technology. We begin by enumerating the advantages of GaN over silicon in terms of performance, cost, and reliability.
Keywords :
III-V semiconductors; gallium compounds; transistors; wide band gap semiconductors; GaN; GaN transistors; Moore´s Law; aging silicon power MOSFET; enhancement-mode gallium nitride transistors; power semiconductor technology; Gallium nitride; Logic gates; MOSFET; Performance evaluation; Silicon; Thermal resistance; FET; GaN FET; MOSFET; enhancement mode; gallium nitride; transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
ISSN :
1943-653X
Print_ISBN :
978-1-4799-6259-4
Type :
conf
DOI :
10.1109/ISPSD.2015.7123375
Filename :
7123375
Link To Document :
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