Title :
Next generation 1200V trench CIGBT for high voltage applications
Author :
Hong Yao Long ; Sweet, Mark R. ; De Souza, Maria Merlyne ; Narayanan, Ekkanath Madathil Sankara
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The characteristics of the next generation of 1200V Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) technology in Non-Punch Through technology are presented. The techniques applied to this novel power device are high density of MOS cells in both unique NMOS and ladder designs with fine pattern process. The device structure and process are optimized to provide the best trade-off between energy losses and ruggedness for industrial power applications.
Keywords :
MOSFET; insulated gate bipolar transistors; MOS cell; energy losses; fine pattern process; high voltage applications; industrial power applications; next generation TCIGBT technology; nonpunch through technology; power device structure; ruggedness; trench clustered insulated gate bipolar transistor; unique NMOS design; unique ladder design; Insulated gate bipolar transistors; Logic gates; MOS devices; Power semiconductor devices; Switches; Temperature measurement; Thyristors;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123382
