Integrated reverse-diodes for GaN-HEMT structures

Author

Reiner, Richard ; Waltereit, Patrick ; Weiss, Beatrix ; Wespel, Matthias ; Quay, Rudiger ; Schlechtweg, Michael ; Mikulla, Michael ; Ambacher, Oliver

Author_Institution

IAF, Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2015

fDate

10-14 May 2015

Firstpage

45

Lastpage

48

Abstract

This work introduces an enhanced GaN-HEMT structure that uses separated Schottky contacts as integrated free-wheeling diodes for the reverse operation. The principle is investigated and compared to other integrated reverse-diode concepts. Different diode structures are fabricated and evaluated. The new concept is demonstrated on a large gate width 600 V-device with on-state currents up to 30 A and an on-state resistance of 215 mΩ. Furthermore, the device achieves a very low gate-charge of below 3 nC and a reverse recovery charge of 8 nC.

Keywords

HEMT integrated circuits; III-V semiconductors; Schottky barriers; Schottky diodes; gallium compounds; wide band gap semiconductors; GaN; Schottky contacts; enhanced GaN-HEMT structure; integrated free-wheeling diode; integrated reverse diode; resistance 215 mohm; reverse operation; voltage 600 V; Decision support systems; Integrated circuits; Power semiconductor devices; HFET; body-diode; free-wheeling; reverse-diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123385

Filename

7123385