A low substrate loss, monolithically integrated power inductor for compact LED drivers

Author

Xiangming Fang ; Mak, Tsz Him ; Yuan Gao ; Lau, Kei May ; Mok, Philip K. T. ; Sin, Johnny K. O.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2015

fDate

10-14 May 2015

Firstpage

53

Lastpage

56

Abstract

In this paper, a low substrate loss, monolithically integrated power inductor for compact LED drivers is designed and experimentally demonstrated. A 5.2 μH inductor is embedded at the backside of the silicon substrate, and the low-k, insulating material SU-8 is used to reduce the substrate loss. The inductor achieves a DC resistance of 2.3 Ω and a peak Q factor of 22 at 3.4 MHz. The inductor, controller, and LED array are flip-chip bonded on a silicon slab for discrete implementation of the monolithically integrated LED driver which achieves an overall power efficiency of 73%.

Keywords

driver circuits; flip-chip devices; inductors; light emitting diodes; monolithic integrated circuits; compact LED driver; efficiency 73 percent; flip-chip devices; frequency 3.4 MHz; low substrate loss power inductor; monolithically integrated power inductor; resistance 2.3 ohm; Copper; Fabrication; Inductors; Light emitting diodes; Resistance; Silicon; Substrates; LED; integrated inductor; power converter;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123387

Filename

7123387