DocumentCode
2811492
Title
Four-terminal field-emission characteristics of double-gate metallic field-emitter array cathodes with controlled apex sizes fabricated by molding and self-aligned gate process
Author
Tsujino, S. ; Kirk, E. ; Vogel, T. ; Gobrecht, J.
Author_Institution
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
fYear
2009
fDate
28-30 April 2009
Firstpage
327
Lastpage
328
Abstract
The field-emission characteristics of double-gate metallic tip array devices were studied. The array consist of pyramidal shaped molybdenum field emitters with ~20 nm-apex-sizes fabricated by a mold technique. By a self-aligned gate-process, we have fabricated double-gate devices with up to 40 times 40-tips. The measurement of the emission current transfer characteristics as a function of the electron extraction gate bias and of the collimation gate bias showed that the influence of the collimation gate bias on the apex field is a factor of ~5 smaller than that of the extraction gate bias voltage in our devices.
Keywords
cathodes; field emitter arrays; molybdenum; Four-terminal field-emission; Mo; collimation gate bias; double-gate metallic tip array devices; electron extraction gate bias; emission current transfer; field-emitter array cathodes; Cathodes; Collimators; Electrodes; Electron emission; Field emitter arrays; Free electron lasers; Scanning electron microscopy; Size control; Virtual colonoscopy; X-ray lasers; X-ray free electron laser; double gate FEAs; high brightness and low emittance cathodes; metallic field emitter array; mold technique; self-aligned gate process;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2009. IVEC '09. IEEE International
Conference_Location
Rome
Print_ISBN
978-1-4244-3500-5
Electronic_ISBN
978-1-4244-3501-2
Type
conf
DOI
10.1109/IVELEC.2009.5193415
Filename
5193415
Link To Document