Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

Author

Miyaoku, Yosuke ; Matsuura, Kai ; Saito, Atsushi ; Kikuchihara, Hideyuki ; Mattausch, Hans Jurgen ; Miura-Mattausch, Mitiko ; Ikoma, Daisaku ; Yamamoto, Takao

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2015

fDate

10-14 May 2015

Firstpage

101

Lastpage

104

Abstract

A compact model for the Partially-Narrow-Mesa (PNM) IGBT is developed. The model reproduces the measured specific feature of a substantial collector current enhancement. Simulated switching characteristics are also verified to reproduce the measurement data. It is further demonstrated that a small switching-loss increase in the studied IGBT structure is overcompensated by the conduction-loss reduction, resulting in reduction of the total loss in comparison to the conventional IGBT structure.

Keywords

insulated gate bipolar transistors; semiconductor device models; PNM IGBT; compact model; conduction-loss reduction; partially-narrow-mesa IGBT; substantial collector current enhancement; switching characteristics; switching-loss increase; Current measurement; Delays; Insulated gate bipolar transistors; Integrated circuit modeling; Simulation; Switches; Switching loss; IGBT; compact model; injection enhancement PNM-IGBT; switching loss; switching performance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123399

Filename

7123399