Title :
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
Abstract :
The following topics were discussed: indium phosphide; photonic network devices; crystal growth; new materials; HBTs; Sb-related materials; quantum dots; etching; HEMTs and diodes; photodetectors; semiconductor lasers; high speed photoelectronic devices; high speed circuit applications; integrated photonic devices; contacts and passivation; epitaxial growth; HFETs; optical modulators; photonic crystals and quantum wires; device processing technology
Keywords :
III-V semiconductors; crystal growth; epitaxial growth; etching; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optics; junction gate field effect transistors; optical modulation; passivation; photodetectors; photonic band gap; photonic switching systems; semiconductor diodes; semiconductor growth; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wires; HBTs; HEMTs; HFETs; InP; Sb-related materials; contacts; crystal growth; device processing technology; diodes; epitaxial growth; etching; high speed circuit applications; high speed photoelectronic devices; indium phosphide; integrated photonic devices; optical modulators; passivation; photodetectors; photonic crystals; photonic network devices; quantum dots; quantum wires; semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba, Japan
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712340
