DocumentCode :
2811729
Title :
Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
Author :
Kjebon, O. ; Öhlander, U. ; Lourdudoss, S. ; Wallin, J. ; Streubel, K. ; Nilsson, S. ; Klinga, T.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fYear :
1994
fDate :
19-23 Sep 1994
Firstpage :
221
Lastpage :
222
Abstract :
Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA1/2 and high maximum bandwidth, 21.7 GHz, have been fabricated
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.55 mum; 21.7 GHz; 3.4 mA; GaInAsP; GaInAsP DFB buried heterostructure lasers; above threshold current; high maximum bandwidth; high resonance frequency; low current injection; low threshold current; multi quantum well DFB lasers; resonance frequency; square root; Bandwidth; Epitaxial growth; Indium phosphide; Laser modes; Masers; Quantum cascade lasers; Quantum well lasers; Resonance; Resonant frequency; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
Type :
conf
DOI :
10.1109/ISLC.1994.519343
Filename :
519343
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2811729
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