Title :
A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC
Author :
Yunwu Zhang ; Jing Zhu ; Weifeng Sun ; Yangyang Lu ; Lihui Gu ; Sen Zhang ; Wei Su
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A high voltage gate drive IC achieving the high dVS/dt noise immunity up to 85V/ns and the allowable negative VS swing to -12V at 15V supply voltage is proposed for the first time. The robust features are due to the presented capacitive loaded level shift circuit used in the gate driver. Measured and simulated results are performed to verify the electrical characteristics of the designed gate driver which is implemented in a 0.5um 600V Bipolar-CMOS-DMOS (BCD) technology.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; driver circuits; bipolar-CMOS-DMOS technology; capacitive-loaded level shift circuit; electrical characteristics; gate driver; high voltage gate drive IC; noise immunity; size 0.5 mum; voltage -12 V; voltage 15 V; voltage 600 V; Capacitors; Delays; Integrated circuit reliability; Integrated circuits; Logic gates; Noise; Voltage control; gate driver; high voltage; level shifter; noise immunity;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123417
