In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons

Author

Taylor, E.W. ; Paxton, A.H. ; Schone, H. ; Carson, R.F. ; Bristow, J. ; Lehman, J.A. ; Hibbs-Brenner, M.K. ; Morgan, R.A. ; Marta, T.

Author_Institution

Phillips Lab., Kirtland AFB, NM, USA

fYear

1997

fDate

15-19 Sep 1997

Firstpage

382

Lastpage

385

Abstract

Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; nonradiative transitions; proton effects; quantum well lasers; surface emitting lasers; 1.19 MGy; 4.5 MeV; 850 nm; AlGaAs; in vacuo response; nonradiative carrier recombination; proton implanted quantum well AlGaAs VCSEL; proton irradiation; scanning ion microbeam; space electronics; vertical cavity surface emitting laser; Laboratories; Laser beams; Mirrors; Photonics; Protons; Quantum well lasers; Space technology; Surface emitting lasers; USA Councils; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on

Conference_Location

Cannes

Print_ISBN

0-7803-4071-X

Type

conf

DOI

10.1109/RADECS.1997.698946

Filename

698946