DocumentCode
2811944
Title
The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs
Author
Camuso, G. ; Udrea, F. ; Udugampola, N. ; Pathirana, V. ; Trajkovic, T.
Author_Institution
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear
2015
fDate
10-14 May 2015
Firstpage
181
Lastpage
184
Abstract
We report here a new physical phenomenon related to contact etch depth in High Voltage Lateral IGBTs (LIGBTs) and propose a design technique to increase yield of LIGBTs in high volume production. We prove for the first time that the contact geometry and placement have direct effect on Collector injection efficiency in LIGBTs. An improved design for 800V LIGBTs obtained by optimising the layout of contact openings is proposed. The new structure resulted in 15% increase in production yield.
Keywords
insulated gate bipolar transistors; power integrated circuits; LIGBT; collector injection efficiency; contact etch depth; contact geometry; contact opening layout; high voltage lateral IGBT; high volume production; power IC; Contacts; Insulated gate bipolar transistors; Layout; Performance evaluation; Production; Silicon; Temperature measurement; Collector Contact; Injection efficiency; Lateral IGBT; Uniformity; Yield;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123419
Filename
7123419
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