Title :
A V-band power amplifier with 11.9 dB gain in CMOS 90-nm process technology
Author :
Ming-Wei Wu ; Yen-Chung Chiang
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
In this paper, a three-stage power amplifier (PA) designed for V-band applications is presented. The proposed PA adopts common-source topology for each stage and is implemented in the CMOS 90-nm process technology. This V-band PA achieves a small signal gain of 11.9dB and a saturated output power of 7.6dBm at the 60GHz operating frequency. The measured peak power added efficiency (PAE) is 4.77%, and its OP1dB is 5dBm. The power consumption of the proposed PA is 97mW from the 1.2V voltage supply.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; CMOS process technology; PAE; V-band PA; V-band power amplifier; common-source topology; frequency 60 GHz; gain 11.9 dB; power 97 mW; power added efficiency; power consumption; size 90 nm; three-stage power amplifier; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Power amplifiers; Power generation; Wireless communication; CMOS 90-nm process technology; V band; power added efficiency; power amplifier;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401600
