Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA^†

Author

Duong, T.H. ; Ortiz, J.M. ; Berning, D.W. ; Hefner, A.R. ; Ryu, S.-H. ; Palmour, J.W.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2015

fDate

10-14 May 2015

Firstpage

217

Lastpage

220

Abstract

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (t_failure) and simulated device internal junction temperature (T_j) at failure for different gate voltages (V_GS) and drain voltages (V_DS).

Keywords

electronic engineering computing; elemental semiconductors; physics computing; power MOSFET; power engineering computing; short-circuit currents; 4H-silicon carbide power MOSFET short-circuit SOA; 4H-silicon carbide power MOSFET short-circuit safe-operating-area; current 31.6 A; current 42 A; device design; device internal junction temperature; drain voltages; dynamic electrothermal simulation; gate voltages; model parameter extraction; physics-based electrothermal Saber model; power semiconductor devices; voltage 1200 V; Current measurement; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Temperature measurement; Time measurement; Voltage measurement; MOSFET; SOA; electro-thermal simulation; model validation; short-circuit; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123428

Filename

7123428

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†

Duong, T.H. ; Ortiz, J.M. ; Berning, D.W. ; Hefner, A.R. ; Ryu, S.-H. ; Palmour, J.W.

conf

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA^†