A low-noise high-gain transimpedance amplifier with high dynamic range in 0.13ìm CMOS

Author

Guoyi Yu ; Xuecheng Zou ; Le Zhang ; Qiming Zou ; Meijun Zheng ; Jianfu Zhong

Author_Institution

Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2012

fDate

21-23 Nov. 2012

Firstpage

37

Lastpage

40

Abstract

This paper designed a low-noise high-gain tran simpedance amplifier with high dynamic range. The input stage of TIA uses an individual power supply to accommodate the level of the photodiode(PD). Then the signal is transmitted to the subsequent circuit by a level shifting circuit. The TIA adopts DCrestore to stabilize work points, and uses a MOS working in the linear region to reduce the effective input signal to realize high dynamic range. Key noise components are optimized to reduce the input referred current noise. This TIA was validated in 0.13 urn CMOS. The simulation results show the -3dB bandwidth is 1.8GHz, the maximum gain is 82.27dB Ω, the input referred noise is 125nA, and the measure current ranges 5uA ~2mA.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; operational amplifiers; photodiodes; DCrestore; PD level; TIA; current 5 muA to 2 mA; dynamic range; frequency 1.8 GHz; input referred current noise; level shifting circuit; linear region; low-noise high-gain transimpedance amplifier; noise component; photodiode level; power supply; size 0.13 mum; Decision support systems; Mercury (metals); Radio frequency; Complementary metal - oxide -semiconductor(CMOS); dynamic range; high-gain; low-noise; tran simpedance amplifier(TIA);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4673-2303-1

Type

conf

DOI

10.1109/RFIT.2012.6401606

Filename

6401606