Title :
The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor
Author :
Woongje Sung ; Huang, Alex Q. ; Baliga, B.J. ; Inhwan Ji ; Haotao Ke ; Hopkins, Douglas C.
Author_Institution :
NSF FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
This paper reports the development of symmetric blocking SiC p-GTO thyristors. The proposed thyristor structure features a positive bevel edge termination implemented by orthogonal dicing technique. In this paper, a detailed design of the device structure, forward current-voltage characteristics, and symmetric blocking capabilities are discussed.
Keywords :
silicon compounds; thyristors; wide band gap semiconductors; SiC; device structure design; forward current-voltage characteristics; orthogonal dicing technique; p-GTO thyristors; positive bevel edge termination; symmetric blocking gate turn-off thyristor; thyristor structure features; Anodes; Doping; Junctions; Logic gates; Silicon carbide; Thyristors; Voltage measurement; 4H-SiC; Bevel Dicing; Edge Termination; GTO; Reverse Blocking; junction termination extension (JTE);
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123438
