• DocumentCode
    2812332
  • Title

    45 GHz low power static frequency divider in 90 nm CMOS

  • Author

    Ali, Mohammed K. ; Hamidian, Amin ; Ran Shu ; Malignaggi, Andrea ; Boeck, Georg

  • Author_Institution
    Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
  • fYear
    2012
  • fDate
    21-23 Nov. 2012
  • Firstpage
    65
  • Lastpage
    67
  • Abstract
    This work presents the design of a Q-band static frequency divider with quadrature signal output suitable for 60 GHz application. The RF performance improvement and power consumption reduction is achieved by using inductive peaking, resistor splitting techniques as well as proper transistor sizing. The static frequency divider is realized in a 90 nm CMOS technology with a chip area of 0.60×0.75 mm2. The self-oscillation frequency is 20.5 GHz with 12 GHz locking range. -16 dBm output power with less than -1 dBm input sensitivity were measured. The static frequency divider core and the output buffers consume 6.9 mW and 1.2 mW respectively from a 1.2 V power supply.
  • Keywords
    CMOS integrated circuits; frequency dividers; low-power electronics; power consumption; resistors; transistors; CMOS technology; Q-band static frequency divider; frequency 45 GHz; frequency 60 GHz; inductive peaking; low power static frequency divider; power consumption reduction; proper transistor sizing; quadrature signal output; resistor splitting techniques; size 90 nm; CMOS integrated circuits; Clocks; Frequency conversion; Inductors; Latches; Resistors; Transistors; Inductive peaking; Q-Band; Splitting resistor; Static Frequency Divider;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-2303-1
  • Type

    conf

  • DOI
    10.1109/RFIT.2012.6401615
  • Filename
    6401615