DocumentCode
2812582
Title
Trends and opportunities in intelligent power modules (IPM)
Author
Otsuki, Masahito ; Watanabe, Manabu ; Nishiura, Akira
Author_Institution
Fuji Electr. Co. Ltd., Matsumoto, Japan
fYear
2015
fDate
10-14 May 2015
Firstpage
317
Lastpage
320
Abstract
This paper describes the trends and opportunities in IGBT intelligent power modules (IGBT-IPM) for industrial and automotive applications. After the 1st generation IPM was released to the market in late 1980´s, continuous technical challenges have pushed them higher performance as well as higher power density. The progresses in IPMs have been done with combination of: 1) Special IGBT chip development, 2) On-chip sensors and 3) Drives and protection. Up to now, in the latest generation IGBT chipset, the IPM has better performance of about one-generation when compared to the widely available standard IGBTs. There are two major direction for future challenges are ongoing in IPM development of : 1) the expanding the power range with new gate drive technologies of managing current balancing in multiple IGBTs connected in parallel. 2) Ultra-fast response challenge by implementing the digital isolators to replace opt-couplers.
Keywords
insulated gate bipolar transistors; sensors; IGBT chip development; IGBT chipset; IGBT intelligent power modules; IGBT-IPM; digital isolators; gate drive technologies; opt-couplers; ultra-fast response; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Multichip modules; Standards; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123453
Filename
7123453
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