• DocumentCode
    2812582
  • Title

    Trends and opportunities in intelligent power modules (IPM)

  • Author

    Otsuki, Masahito ; Watanabe, Manabu ; Nishiura, Akira

  • Author_Institution
    Fuji Electr. Co. Ltd., Matsumoto, Japan
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    This paper describes the trends and opportunities in IGBT intelligent power modules (IGBT-IPM) for industrial and automotive applications. After the 1st generation IPM was released to the market in late 1980´s, continuous technical challenges have pushed them higher performance as well as higher power density. The progresses in IPMs have been done with combination of: 1) Special IGBT chip development, 2) On-chip sensors and 3) Drives and protection. Up to now, in the latest generation IGBT chipset, the IPM has better performance of about one-generation when compared to the widely available standard IGBTs. There are two major direction for future challenges are ongoing in IPM development of : 1) the expanding the power range with new gate drive technologies of managing current balancing in multiple IGBTs connected in parallel. 2) Ultra-fast response challenge by implementing the digital isolators to replace opt-couplers.
  • Keywords
    insulated gate bipolar transistors; sensors; IGBT chip development; IGBT chipset; IGBT intelligent power modules; IGBT-IPM; digital isolators; gate drive technologies; opt-couplers; ultra-fast response; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Multichip modules; Standards; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
  • Conference_Location
    Hong Kong
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-6259-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.2015.7123453
  • Filename
    7123453