Fully integrated SOI gate driver for control of 1200V IGBT switches in three-level-NPC topology

Author

Vogler, Bastian ; Herzer, Reinhard ; Buetow, Sven

Author_Institution

Semikron Elektron. Germany, Nuremberg, Germany

fYear

2015

fDate

10-14 May 2015

Firstpage

333

Lastpage

336

Abstract

A novel gate driver for the control of 1200V IGBT switches in Three-Level Neutral Point Clamp (3L-NPC) half bridges based on high voltage silicon on insulator (SOI) technology is presented. The driver features a safety concept dedicated for 3L-NPC applications. The three dies of this multichip solution are assembled in a tiny cost effective IC package with excellent electrical and thermal properties. The measurement results demonstrate the driver performance at high voltage switching and power inverter operation. The new driver approach supports the market needs for cost efficient 3L gate driver circuits.

Keywords

bridge circuits; clamps; driver circuits; invertors; power semiconductor switches; silicon-on-insulator; switching convertors; 3L-NPC half bridge; IC package; IGBT switch control; electrical property; high voltage silicon on insulator technology; high voltage switching inverter operation; integrated SOI gate driver circuit; multichip solution; power inverter operation; thermal property; three-level-NPC topology; voltage 1200 V; Bridge circuits; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Silicon-on-insulator; Switches; Topology; Gate Driver; HVIC; IGBT; NPC; SOI; Three-Level;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123457

Filename

7123457