DocumentCode :
2812755
Title :
Investigation of Substrate Noise Isolation Solutions in Deep Submicron (DSM) CMOS Technology
Author :
Lin, Henry ; Kuo, James ; Sobot, Robert ; Syrzycki, Marek
Author_Institution :
Simon Fraser Univ., Burnaby
fYear :
2007
fDate :
22-26 April 2007
Firstpage :
1106
Lastpage :
1109
Abstract :
This paper investigates substrate noise propagation and attenuation with a focus on analysis for deep submicron structures and short propagation distances. The discussed issues include effects of noise source/target doping types, noise source and target separation distances, presence of guard rings, and the utilization of deep-well structures on noise shielding. Simulation results from 2D simulators MEDICItrade and SEQUOIAtrade are presented in the analysis. We also propose a p-n-p-well with deep n-well guard ring structure which facilitates a fully isolated p-well while providing over 50 dB of noise attenuation up to 10 GHz .
Keywords :
CMOS integrated circuits; integrated circuit noise; isolation technology; radiofrequency integrated circuits; semiconductor doping; system-on-chip; RF electronics; deep submicron CMOS technology; guard ring structure; noise attenuation; noise shielding; short propagation distance; simulation; substrate noise isolation; system-on-chip; target doping type; target separation distance; Analytical models; Attenuation; CMOS technology; Circuit noise; Circuit simulation; Computational modeling; Doping; Isolation technology; Medical simulation; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on
Conference_Location :
Vancouver, BC
ISSN :
0840-7789
Print_ISBN :
1-4244-1020-7
Electronic_ISBN :
0840-7789
Type :
conf
DOI :
10.1109/CCECE.2007.282
Filename :
4232941
Link To Document :
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