DocumentCode :
2812879
Title :
Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels
Author :
Zorn, Christian ; Kaminski, Nando
Author_Institution :
Inst. for Electr. Drives, Power Electron., & Devices, Univ. of Bremen, Bremen, Germany
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
385
Lastpage :
388
Abstract :
The temperature-humidity-bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 hrs tests at 85 degree Celsius and 85 percent relative humidity (85/85) are used to predict up to 25 years of operation. With regard to the respective standards asking for limited self-heating, the bias was commonly limited to 80 V. Nevertheless, recent THB tests on 1.7 kV IGBT modules have shown that higher bias is a more severe test condition. Failure analysis confirmed corrosion of the Al chip-metallization as well as Cu-and Ag-dendrites as the relevant failure mechanisms. In order to determine the acceleration due to bias, 1.2 kV IGBT-modules were tested in THB at 65 percent and 90 percent of their nominal voltage Vnom, respectively. A characteristic degradation consisting of three phases has been identified. The 2nd phase seems to be determined by Al corrosion and a factor of about two has been estimated for the acceleration between the aforementioned test-voltages. Within the 3rd phase, the devices stabilized probably due to localized self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage increases the risk of thermal runaway, i.e. catastrophic breakdown especially when biased close to Vnom.
Keywords :
corrosion; insulated gate bipolar transistors; life testing; power semiconductor devices; semiconductor device reliability; semiconductor device testing; IGBT modules; accelerated stress testing; corrosion mechanisms; failure analysis; failure mechanisms; high bias level; humidity driven degradation mechanisms; localized self-heating; temperature humidity bias testing acceleration; voltage 1.2 kV; Acceleration; Corrosion; Degradation; Humidity; Insulated gate bipolar transistors; Metals; Testing; IGBT module; THB; accelerated testing; bias influence; corrosion; dendrites; humidity degradation; metallization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
ISSN :
1943-653X
Print_ISBN :
978-1-4799-6259-4
Type :
conf
DOI :
10.1109/ISPSD.2015.7123470
Filename :
7123470
Link To Document :
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