Title :
Nonlinear chirp compensation in high-power (>100 W) broad spectrum (~20 nm) pulses from mode-locked AlGaAs lasers
Author :
Azouz, A. ; Stelmakh, N. ; Langlois, P. ; Lourtioz, J.-M. ; Gavrilovic, P.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
In this paper, we show that very broad pulse spectra (20 nm) can be effectively obtained by active/hybrid mode-locking of long-stripe (1 mm) high-power AlGaAs laser diodes, the spectral widths corresponding in principle to sub-100 fs pulses in the transform-limit situation. A novel technique is presented in order to analyze chirp non-linearities (i.e, high-order dispersion effects) in the laser pulses. Second- and third-order dispersion compensation is realized with an external compressor, leading to 160 fs pulses after compression with peak powers in excess of 100 W
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; compensation; electro-optical modulation; gallium arsenide; high-speed optical techniques; laser mode locking; nonlinear optics; optical dispersion; optical pulse compression; quantum well lasers; spectral line breadth; 100 W; 100 fs; 160 fs; AlGaAs; active mode-locking; chirp nonlinearities; external compressor; high-order dispersion effects; high-power AlGaAs laser diodes; high-power broad spectrum pulses; hybrid mode-locking; laser mode locking; laser pulses; long-stripe; mode-locked AlGaAs lasers; nonlinear chirp compensation; peak powers; spectral widths; sub-100 fs pulses; third-order dispersion compensation; transform-limit situation; Autocorrelation; Chirp; Diode lasers; Dispersion; Laser mode locking; Optical pulses; Power lasers; Pulse amplifiers; Pulse measurements; Space vector pulse width modulation;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519349
