Analysis of space-charge wave propagation at semiconductor surface in an MIS structure

Author

Han, K. ; Wong, T.T.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

fYear

1991

fDate

24-28 June 1991

Firstpage

1382

Abstract

The space-charge wave guided along the surface of the semiconductor in a metal-insulator-semiconductor (MIS) structure is analyzed by coupling the Maxwell´s equations with the transport equations of the carriers. Numerical results on the propagation constant, carrier concentrations, and field distribution for the fundamental mode (TM) are presented. The numerical results indicate that the space charge has a strong screening effect on the transverse component of the electric field of the fundamental (TM) mode. The longitudinal component, however, is mainly governed by an energy dissipation effect resulting from the conduction current.<>

Keywords

carrier density; guided electromagnetic wave propagation; metal-insulator-semiconductor structures; space charge; waveguides; MIS structure; Maxwell´s equations; TM; carrier concentrations; conduction current; electric field; energy dissipation effect; field distribution; fundamental mode; longitudinal component; metal-insulator-semiconductor; parallel plate waveguide; propagation constant; screening effect; semiconductor surface; space-charge wave propagation; transport equations; transverse component; Charge carrier density; Charge carriers; Electromagnetic propagation; Electromagnetic scattering; Electromagnetic waveguides; Maxwell equations; Metal-insulator structures; Propagation constant; Semiconductor waveguides; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 1991. AP-S. Digest

Conference_Location

London, Ontario, Canada

Print_ISBN

0-7803-0144-7

Type

conf

DOI

10.1109/APS.1991.175107

Filename

175107