DocumentCode
2812999
Title
A one-chip isolated gate driver with Drive-by-Microwave technologies
Author
Nagai, Shuichi ; Negoro, Noboru ; Fukuda, Toshio ; Otsuka, N. ; Ueda, Toshitsugu ; Tanaka, T. ; Ueda, Daisuke
Author_Institution
Adv. Technol. Res. Labs., Panasonic Corp., Kyoto, Japan
fYear
2012
fDate
21-23 Nov. 2012
Firstpage
165
Lastpage
167
Abstract
We have developed new isolated gate drivers using what we call Drive-by-Microwave technology that enables wireless power transmission of input signals. In order to realize the compactness of the gate driver and to obtain isolated gate signals with enough power to directly drive the switching power devices, we have developed a novel compact butterfly-shaped electro-magnetic resonant coupler (EMRC) that operates with RF converted input signals at 5.8GHz. By integrating this EMRC, one-chip GaN isolated gate driver ICs on a sapphire substrate have been developed and their direct driving of the GaN-GIT power switching devices was successfully demonstrated.
Keywords
III-V semiconductors; coupled circuits; driver circuits; gallium compounds; isolation technology; microwave circuits; resonance; sapphire; switching circuits; wide band gap semiconductors; EMRC; GaN; GaN-GIT power switching device; RF converted input signal; compact butterfly-shaped electromagnetic resonant coupler; drive-by-microwave technology; frequency 5.8 GHz; isolated gate signal; one-chip isolated gate driver IC; sapphire substrate; switching power device; wireless power transmission; Couplers; Gallium nitride; Logic gates; Microwave technology; Radio frequency; Substrates; Switches; Driver circuits; Electromagnetic coupling; GaN-HFET; Microwave technology; Power semiconductor switches; Sapphire substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4673-2303-1
Type
conf
DOI
10.1109/RFIT.2012.6401648
Filename
6401648
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