DocumentCode :
2813092
Title :
A cryogenic 30–50 GHz balanced low noise amplifier using 0.15-μm MHEMT process for radio astronomy applications
Author :
Shou-Hsien Weng ; Wei-Chu Wang ; Hong-Yeh Chang ; Chau-Ching Chiong ; Ming-Tang Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2012
fDate :
21-23 Nov. 2012
Firstpage :
177
Lastpage :
179
Abstract :
In this paper, a Q-band balanced low noise amplifier (LNA) for radio astronomy applications is presented using 0.15-μm InGaAs metamorphic high electron mobility transistor (MHEMT) process. By using the balanced configuration, the input/output return losses and output 1-dB compression point of the LNA are improved. For the on-wafer measurement, the balanced LNA exhibits a broad bandwidth of from 27.3 to 50.7 GHz with a small-signal gain of 23.1 dB. The balanced LNA is further assembled in a packaged module for the cryogenic measurement. At a cryogenic temperature of 28 K, the average small-signal gain is higher than 19.5 dB from 30 to 50 GHz with the minimum equivalent noise temperature of 44.8 K. The proposed balanced LNA exhibits potential for radio astronomy applications due to its high small-signal gain, low noise, and low dc power consumption.
Keywords :
III-V semiconductors; cryogenic electronics; differential amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; losses; low noise amplifiers; microwave amplifiers; millimetre wave amplifiers; radioastronomy; MHEMT process; Q-band balanced LNA; Q-band balanced low noise amplifier; compression point; cryogenic balanced low noise amplifier; cryogenic measurement; cryogenic temperature; equivalent noise temperature; frequency 27.3 GHz to 50.7 GHz; gain 23.1 dB; input-output return losses; low DC power consumption; metamorphic high electron mobility transistor process; on-wafer measurement; packaged module; radioastronomy applications; size 0.15 mum; small-signal gain; temperature 28 K; temperature 44.8 K; Cryogenics; Extraterrestrial measurements; Gain; Noise; Noise measurement; mHEMTs; Cryogenic; low noise amplifier; metamorphic high electron mobility transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
Type :
conf
DOI :
10.1109/RFIT.2012.6401652
Filename :
6401652
Link To Document :
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