Title :
New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers
Author :
Evans, J.D. ; Simmons, J.G.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
A new relationship describing the threshold current vs. temperature relation of InGaAsP/InP MQW lasers is proposed. The commonly used characteristic temperature, T0, is replaced by a new, temperature insensitive parameter Tmax, which represents the lasers´ maximum operating temperature
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; sensitivity; InGaAsP-InP; InGaAsP/InP MQW lasers; characteristic temperature; long wavelength semiconductor lasers; maximum laser operating temperature; temperature insensitive parameters; temperature relation; temperature sensitivity; threshold current; Charge carrier density; Electrons; Indium phosphide; Laser theory; Quantum well devices; Radiative recombination; Semiconductor lasers; Temperature dependence; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519351
