Title :
Effects of annealing on microstructure of osmium-ruthenium thin films
Author :
Li, W.-C. ; Roberts, S. ; Balk, T. John
Author_Institution :
Dept. of Chem. & Mater. Eng., Univ. of Kentucky, Lexington, KY, USA
Abstract :
Osmium-ruthenium (OsRu) thin films of different thickness were deposited on porous tungsten (W) pellets in a configuration similar to dispenser cathodes, using two separate sputtering systems. In order to assess which films may best inhibit interdiffusion between the OsRu film and the W substrate during annealing, the grain structure and texture of OsRu films were characterized by x-ray diffraction and scanning electron microscopy.
Keywords :
annealing; chemical interdiffusion; crystal microstructure; metallic thin films; osmium alloys; ruthenium alloys; OsRu; W; X-ray diffraction; annealing; grain structure; interdiffusion; microstructure; osmium-ruthenium thin films; scanning electron microscopy; sputtering systems; Annealing; Barium; Cathodes; Coatings; Microstructure; Scanning electron microscopy; Sputtering; Substrates; Transistors; X-ray scattering; microstructure; osmium; ruthenium; thin film;
Conference_Titel :
Vacuum Electronics Conference, 2009. IVEC '09. IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-3500-5
Electronic_ISBN :
978-1-4244-3501-2
DOI :
10.1109/IVELEC.2009.5193510
