Title :
Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs
Author :
Albahrani, Sayed A. ; Parker, Anthony E.
Author_Institution :
Dept. of Phys. & Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; pulse amplifiers; transients; wide band gap semiconductors; GaN; HEMT; drain-current transient; premeasurement terminal correction; pulse-amplifier slew-rate; pulsed-IV measurement; self-heating dynamics; thermal response; trap dynamics; trap time-constant; trap-potential; FETs; Gallium nitride; HEMTs; MODFETs; Physics; Predictive models; Pulse amplifiers; Pulse measurements; Time measurement; Transfer functions; HEMT; Pulse measurement; pulse amplifier slew rate; self-heating; trap;
Conference_Titel :
Microwave Measurements Conference (ARFTG), 2010 75th ARFTG
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6364-0
DOI :
10.1109/ARFTG.2010.5496336