Title :
Field emission property improved by ZnO acicular nanostructure through chemical bath deposition
Author :
Chen, J. ; Lei, W. ; Zhang, X.B.
Author_Institution :
Dept. of Electron. Eng., Southeast Univ., Nanjing, China
Abstract :
ZnO acicular nanostructure was designed and grown from aqueous solution on the conductive substrate. The diameter of ZnO was 50 nm and length was about 5 mum. due to the large aspect ratio, the as-prepare ZnO sample was applied in filed emission with turn-on electric intensity of 3.2 V/mum and enhancement factor beta of 2830.
Keywords :
II-VI semiconductors; chemical vapour deposition; field emission; nanostructured materials; wide band gap semiconductors; zinc compounds; ZnO; acicular nanostructure; chemical bath deposition; conductive substrate; field emission property; turn-on electric intensity; Anodes; Cathodes; Chemical vapor deposition; Glass; Indium tin oxide; Organic chemicals; Ovens; Pressure measurement; Temperature; Zinc oxide; ZnO; chemical bath; field emission;
Conference_Titel :
Vacuum Electronics Conference, 2009. IVEC '09. IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-3500-5
Electronic_ISBN :
978-1-4244-3501-2
DOI :
10.1109/IVELEC.2009.5193519
