• DocumentCode
    2813436
  • Title

    Study of gain in determining T0 of 1.3 μm semiconductor lasers

  • Author

    Ackerman, D.A. ; Morton, P.A. ; Kazarinov, R.E. ; Hybertsen, M.S. ; Shtengel, G.E. ; Tanbun-Ek, T. ; Logan, R.A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    Extensive measurements on 1.3 μm semiconductor lasers show the dominant role of gain in threshold temperature dependence. Material gain is decomposed into two components using chemical potential in order to isolate deviation of theoretical predictions from experimental results
  • Keywords
    carrier density; carrier lifetime; chemical potential; infrared sources; laser theory; quantum well lasers; semiconductor device models; 1.3 mum; chemical potential; semiconductor laser gain; threshold temperature dependence; Charge carrier density; Chemical lasers; Gain measurement; Laser theory; Optical materials; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519352
  • Filename
    519352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2813436