Variation of kink power with cavity length in weakly index guided semiconductor lasers

Author

van der Poel, C.J. ; Schemmann, M.F.C. ; Acket, G.A.

Author_Institution

Philips Optoelectron. Centrer, Eindhoven, Netherlands

fYear

1994

fDate

19-23 Sep 1994

Firstpage

241

Lastpage

242

Abstract

A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 μm are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets

Keywords

laser cavity resonators; laser mirrors; laser modes; laser theory; optical correlation; quantum well lasers; refractive index; semiconductor device models; waveguide lasers; 100 to 350 mum; AlGaAs; InGaAlAs; InGaAlP; cavity length; first order modes; front mirror facets; kink power; laser length; laser lengths; lateral far field distributions; oscillatory behaviour; periodic dependence; phase locked fundamental laser modes; rear mirror facets; weakly index guided semiconductor lasers; weakly-index guided high power stripe lasers; Diffraction; Laser mode locking; Laser modes; Mirrors; Optical materials; Power generation; Power lasers; Power system modeling; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519353

Filename

519353