DocumentCode :
2813708
Title :
Liquid Phase Electroepitaxial (LPEE) Growth and Photoluminescence Characterization of Undoped GaInAsSb (2.25μm) at 530°C
Author :
Simpson, Darrell L. ; Iyer, Shanthi ; Abul-Fadl, Ali
Author_Institution :
North Carolina A&T State University, Department of Electrical Engineering
fYear :
1992
fDate :
1-3 Mar 1992
Firstpage :
525
Lastpage :
526
Keywords :
Epitaxial growth; Excitons; Infrared detectors; Lattices; Molecular beam epitaxial growth; Performance evaluation; Photoluminescence; Photonic band gap; Substrates; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory, 1992. Proceedings. SSST/CSA 92. The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design
ISSN :
0094-2898
Print_ISBN :
0-8186-2665-8
Type :
conf
DOI :
10.1109/SSST.1992.712352
Filename :
712352
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2813708
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