Title :
Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy
Author :
Kobayashi, Ryuji ; Hotta, Hitoshi ; Miyasaka, Fumito ; Hara, Kunihiro ; Kobayashi, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Summary form only given. Selective growth of high bandgap energy AlInP layers were established by HCl-assisted MOVPE and applied to real index guided AlGaInP high power lasers for the first time. Reduction in threshold current and increase in slope efficiency were obtained. CW operation over 50 mW without any kinks was achieved
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; optical fabrication; quantum well lasers; refractive index; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 50 mW; AlGaInP; AlGaInP visible laser; AlInP; AlInP current blocking layer; CW operation; GaInP; GaInP quantum well lasers; HCl; HCl-assisted MOVPE; HCl-assisted metalorganic vapor phase epitaxy; high bandgap energy; high bandgap energy AlInP layers; high power lasers; real index guided visible laser; selective growth; slope efficiency; threshold current; Epitaxial growth; Gallium arsenide; Gas lasers; Human computer interaction; Laser modes; Optical waveguides; Photonic band gap; Power lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519354
