Tunable 2.7-3.7 μm InAsSb(P)/InAsSbP low threshold diode lasers

Author

Yakovlev, Yu.P. ; Baranov, A.N. ; Imenkov, A.N. ; Sherstnev, V.V.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1994

fDate

19-23 Sep 1994

Firstpage

245

Lastpage

246

Abstract

The laser structures were grown by liquid phase epitaxial growth (LPE) on InAs (100) substrate and consisted of two cladding layers of the InAsSbP alloy with InP mole fraction and active layer which was made either of InAsSbP with a lower band gap or of the InAsSb solid solution. This report is devoted to study the temperature dependence of the threshold current and laser tunability by current

Keywords

III-V semiconductors; claddings; energy gap; indium compounds; infrared sources; laser tuning; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; InAs; InAs (100) substrate; InAsSb; InAsSb solid solution; InAsSb-InAsSbP low threshold diode lasers; InAsSbP; InAsSbP alloy; InAsSbP-InAsSbP low threshold diode lasers; InP mole fraction; active layer; cladding layers; laser structures; laser tunability; liquid phase epitaxial growth; lower band gap; temperature dependence; threshold current; Diode lasers; Indium phosphide; Laser modes; Laser theory; Ocean temperature; Solid lasers; Spectroscopy; Temperature dependence; Threshold current; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519355

Filename

519355