Title :
Tunable 2.7-3.7 μm InAsSb(P)/InAsSbP low threshold diode lasers
Author :
Yakovlev, Yu.P. ; Baranov, A.N. ; Imenkov, A.N. ; Sherstnev, V.V.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The laser structures were grown by liquid phase epitaxial growth (LPE) on InAs (100) substrate and consisted of two cladding layers of the InAsSbP alloy with InP mole fraction and active layer which was made either of InAsSbP with a lower band gap or of the InAsSb solid solution. This report is devoted to study the temperature dependence of the threshold current and laser tunability by current
Keywords :
III-V semiconductors; claddings; energy gap; indium compounds; infrared sources; laser tuning; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; InAs; InAs (100) substrate; InAsSb; InAsSb solid solution; InAsSb-InAsSbP low threshold diode lasers; InAsSbP; InAsSbP alloy; InAsSbP-InAsSbP low threshold diode lasers; InP mole fraction; active layer; cladding layers; laser structures; laser tunability; liquid phase epitaxial growth; lower band gap; temperature dependence; threshold current; Diode lasers; Indium phosphide; Laser modes; Laser theory; Ocean temperature; Solid lasers; Spectroscopy; Temperature dependence; Threshold current; Tunable circuits and devices;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519355
