Title :
800 mW peak power self-sustained pulsation GaAlAs laser diodes
Author :
Takayama, T. ; Imafuji, O. ; Sugiura, H. ; Yuri, M. ; Naito, H. ; Kume, M. ; Yoshikawa, A. ; Itoh, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
We have developed a self-sustained pulsation laser whose peak power is as high as 0.8 W for the first time, by using a new multiple-quantum-well (MQW) real refractive index guided structure with large saturable absorber
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; optical saturable absorption; quantum well lasers; refractive index; 0.8 W; 800 nW; GaAlAs; GaAlAs laser diodes; large saturable absorber; multiple-quantum-well lasers; peak power lasers; real refractive index guided structure; self-sustained pulsation laser; self-sustained pulsation lasers; Diode lasers; Nonlinear optics; Optical computing; Optical harmonic generation; Optical refraction; Optical variables control; Power generation; Power lasers; Quantum well devices; Refractive index;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519356
