DocumentCode
281435
Title
The quantum Hall effect and the ohm
Author
Hartland, A. ; Jones, R.G. ; Legg, D.J.
Author_Institution
Div. of Electr. Sci., NPL, Teddington, UK
fYear
1989
fDate
32528
Abstract
The authors discuss the development of resistance standards based on the quantum Hall effect. The first measurements had a fractional uncertainty >5×10-6, but subsequent experiments in the major national standards laboratories have refined the measurements in different semiconducting materials, particularly the gallium arsenide-aluminium gallium arsenide heterostructure, to such an extent that reproducibilities of 5×10-9 are routinely available
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; GaAs-AlGaAs; III-V semiconductor; national standards laboratories; ohm; p-n heterostructure; quantum Hall effect; resistance standards;
fLanguage
English
Publisher
iet
Conference_Titel
Changes in the Value of the UK National Reference Standards for the Volt and the Ohm, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
197733
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