Title :
Latest developments in VGF technology: GaAs, InP, and GaP
Author :
Young, M. ; Liu, X. ; Zhang, D. ; Zhu, M. ; Hu, X.Y.
Author_Institution :
American Xtal Technol., Fremont, CA, USA
Abstract :
VGF (vertical gradient freeze) technology produces the world´s highest quality III-V semiconductors, including GaAs, InP, and GaP. In this paper, we review the latest developments of the VGF technology in terms of the crystal quality, electrical characteristics and mechanical strength, as well as epitaxy and implant applications
Keywords :
III-V semiconductors; carrier mobility; crystal growth from melt; electrical resistivity; gallium arsenide; gallium compounds; grain boundaries; indium compounds; ion implantation; mechanical strength; semiconductor growth; GaAs; GaP; InP; crystal quality; epitaxy; ion implantation; mechanical strength; mobility; resistivity; vertical gradient freeze technology; Conductivity; Crystalline materials; Gallium arsenide; Grain boundaries; Indium phosphide; Manufacturing industries; Production; Semiconductor device manufacture; Semiconductor materials; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712393
