Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a 3-inch wafer

Author

Shima, A. ; Nishiguchi, H. ; Kato, M. ; Nagai, Y. ; Motoda, T. ; Nishimura, T. ; Omura, E. ; Otsubo, M.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

253

Lastpage

254

Abstract

Summary form only given. High-power, 68O nm laser diodes (LD´s) with uniform characteristics and 100 μm-spaced, 4 element individually addressable LD arrays have been fabricated, for the first time, on a 3-inch GaAs substrate. The LD´s have been operating for over 2,000 hours and the elements of the LD arrays have exhibited uniform high-power and high-temperature characteristics

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; life testing; optical testing; quantum well lasers; semiconductor device testing; semiconductor laser arrays; 100 mum; 2000 h; 3 in; 680 nm; AlGaInP; AlGaInP visible laser diodes; GaAs substrate; LD arrays; four-element arrays; high-power characteristics; high-temperature characteristics; individually addressable LD arrays; uniform characteristics; uniform high-power characteristics; Controllability; Diode lasers; Fluid flow measurement; Gallium arsenide; Mirrors; Optical arrays; Optical device fabrication; Semiconductor laser arrays; Space vector pulse width modulation; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519359

Filename

519359