Title :
Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a 3-inch wafer
Author :
Shima, A. ; Nishiguchi, H. ; Kato, M. ; Nagai, Y. ; Motoda, T. ; Nishimura, T. ; Omura, E. ; Otsubo, M.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Summary form only given. High-power, 68O nm laser diodes (LD´s) with uniform characteristics and 100 μm-spaced, 4 element individually addressable LD arrays have been fabricated, for the first time, on a 3-inch GaAs substrate. The LD´s have been operating for over 2,000 hours and the elements of the LD arrays have exhibited uniform high-power and high-temperature characteristics
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; life testing; optical testing; quantum well lasers; semiconductor device testing; semiconductor laser arrays; 100 mum; 2000 h; 3 in; 680 nm; AlGaInP; AlGaInP visible laser diodes; GaAs substrate; LD arrays; four-element arrays; high-power characteristics; high-temperature characteristics; individually addressable LD arrays; uniform characteristics; uniform high-power characteristics; Controllability; Diode lasers; Fluid flow measurement; Gallium arsenide; Mirrors; Optical arrays; Optical device fabrication; Semiconductor laser arrays; Space vector pulse width modulation; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519359
