Title :
InGaAs bulk crystal growth for high T0 semiconductor lasers
Author :
Nishijima, Yoshito ; Nakajima, Kazuo ; Otsubo, Koji ; Ishikawa, Hiroshi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The InxGa1-xAs (x=0.25~0.30) bulk crystal is necessary for the high characteristic temperature (T0) lasers emitting in 1.3 μm. We have developed the multi-component zone growth method using an InGaAs Bridgman crystal as the seed. In this paper, we show that InGaAs single seed crystals can be grown by the Bridgman method and that In0.28Ga0.72As crystals with uniform composition in the growth direction can be grown. We think that our bulk crystal growth method should be effective for other ternary compound semiconductors
Keywords :
III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; 1.3 mum; Bridgman crystal; In0.28Ga0.72As; characteristic temperature; crystal growth; multi-component zone growth; semiconductor lasers; uniform composition; Argon; Crystals; Dispersion; Furnaces; Gallium arsenide; Indium gallium arsenide; Semiconductor lasers; Shape; Temperature control; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712397
