• DocumentCode
    2814761
  • Title

    InGaAs bulk crystal growth for high T0 semiconductor lasers

  • Author

    Nishijima, Yoshito ; Nakajima, Kazuo ; Otsubo, Koji ; Ishikawa, Hiroshi

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    The InxGa1-xAs (x=0.25~0.30) bulk crystal is necessary for the high characteristic temperature (T0) lasers emitting in 1.3 μm. We have developed the multi-component zone growth method using an InGaAs Bridgman crystal as the seed. In this paper, we show that InGaAs single seed crystals can be grown by the Bridgman method and that In0.28Ga0.72As crystals with uniform composition in the growth direction can be grown. We think that our bulk crystal growth method should be effective for other ternary compound semiconductors
  • Keywords
    III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; 1.3 mum; Bridgman crystal; In0.28Ga0.72As; characteristic temperature; crystal growth; multi-component zone growth; semiconductor lasers; uniform composition; Argon; Crystals; Dispersion; Furnaces; Gallium arsenide; Indium gallium arsenide; Semiconductor lasers; Shape; Temperature control; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712397
  • Filename
    712397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2814761