DocumentCode :
2814863
Title :
Optical characterization of the energy gap of MOVPE-grown InAsBi
Author :
Okamoto, Hiroshi ; Oe, Kunishige
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
60
Lastpage :
63
Abstract :
The InBi-content dependence of the energy gap (Eg) and its temperature dependence are evaluated for InAsBi-epitaxial layers by optical-transmission and low-temperature PL measurements. Eg decreases with increasing InBi content, and this relation is expressed by a linear equation. The temperature dependence of Eg decreases with increasing InBi-content. The ΔEg/ΔT of 0.22 meV/K obtained for InAs0.963Bi0.037 is smaller than that of InSb (0.29 meV/K), whose energy gap is smaller than that of InAs0.963 Bi0.037
Keywords :
III-V semiconductors; MOCVD coatings; energy gap; indium compounds; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; visible spectra; InAsBi; MOVPE-grown InAsBi; energy gap; linear equation; low-temperature photoluminescence; optical-transmission; temperature dependence; Absorption; Energy measurement; Epitaxial growth; Epitaxial layers; Infrared detectors; Lattices; Optical films; Photonic band gap; Substrates; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712401
Filename :
712401
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2814863
بازگشت