Title :
InP HBT technology and applications
Author :
Streit, Dwight C. ; Cowles, John C. ; Kobayashi, Kevin W. ; Gutierrez-Aitken, Augusto ; Block, Thomas R. ; Wojotowicz, Mike ; Yamada, Frank ; Kaneshiro, Eric ; Tran, Liem T. ; Grossman, Chris ; Yang, Li-Wu ; Lammert, Mike ; Leslie, Gregg ; Steel, Vic ; De
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
TRW has the world´s only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT technology to produce advanced HBT integrated circuits for space and defense applications as well as high volume commercial applications. Here we present performance characteristics for InP HBT ICs for consumer products and advanced space and defense applications
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; HBT integrated circuits; HBT technology; InP; consumer products; defense applications; high volume commercial applications; space applications; Application specific integrated circuits; Consumer products; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MMICs; Molecular beam epitaxial growth; Production; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712402
