InP HBT technology and applications

Author

Streit, Dwight C. ; Cowles, John C. ; Kobayashi, Kevin W. ; Gutierrez-Aitken, Augusto ; Block, Thomas R. ; Wojotowicz, Mike ; Yamada, Frank ; Kaneshiro, Eric ; Tran, Liem T. ; Grossman, Chris ; Yang, Li-Wu ; Lammert, Mike ; Leslie, Gregg ; Steel, Vic ; De

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

64

Lastpage

67

Abstract

TRW has the world´s only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT technology to produce advanced HBT integrated circuits for space and defense applications as well as high volume commercial applications. Here we present performance characteristics for InP HBT ICs for consumer products and advanced space and defense applications

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; HBT integrated circuits; HBT technology; InP; consumer products; defense applications; high volume commercial applications; space applications; Application specific integrated circuits; Consumer products; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MMICs; Molecular beam epitaxial growth; Production; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712402

Filename

712402