Title :
Power performance of PNP InAlAs/InGaAs HBTs
Author :
Sawdai, D. ; Zhang, X. ; Pavlidis, D. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated, nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine their suitability for high-frequency power applications. PNP HBTs demonstrated fT and fmax as high as 13 and 35 GHz, respectively. Power performance at 10 GHz was comparable to InP-based NPN single HBTs, providing up to 10 dB of gain, 0.49 mW/μ2 of output power, and 24% power-added efficiency. Analysis of these HBTs suggests further design and epilayer optimizations for increased power performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave power transistors; power bipolar transistors; 10 dB; 13 GHz; 24 percent; 35 GHz; InAlAs-InGaAs; PNP InAlAs/InGaAs HBTs; X-band; high-frequency power applications; large signal conditions; power performance; small-signal microwave performance; Circuits; Doping; Energy consumption; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Power amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712404
