DocumentCode
2815304
Title
Direct and inverse energy trapping in the thin film resonators and optimization of their designs
Author
Detaint, J. ; Capelle, B.
Author_Institution
IMPMC, Univ. Paris VI, Paris
fYear
2008
fDate
19-21 May 2008
Firstpage
19
Lastpage
24
Abstract
In this communication we consider the application of the Tiersten theory of the energy trapping of the "essentially" thickness modes to thin film resonators using the thickness extensional modes of ZnO and AlN textured films. Considering mainly the applications to filtering, we discuss the conditions allowing obtaining a single mode response, the influence of the shape of the electrodes and of the boundary conditions. It is observed that circular geometries are more favorable, that particular geometries allow to obtains resonators and monolithic filters with lower inductance values and that particular filter topologies allows much better performance than those presently most often used.
Keywords
II-VI semiconductors; III-V semiconductors; aluminium compounds; circuit optimisation; crystal filters; crystal resonators; network synthesis; network topology; resonators; semiconductor thin films; thin film devices; zinc compounds; AlN; Tiersten theory; ZnO; boundary conditions; circular geometries; direct energy trapping; electrodes shape; filter design optimization; filter topologies; filtering applications; inductance values; inverse energy trapping; monolithic filters; piezoelectric devices; single mode response; textured films; thickness extensional modes; thin film resonators; Boundary conditions; Design optimization; Electrodes; Filtering; Geometry; Inductance; Resonator filters; Shape; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 2008 IEEE International
Conference_Location
Honolulu, HI
ISSN
1075-6787
Print_ISBN
978-1-4244-1794-0
Electronic_ISBN
1075-6787
Type
conf
DOI
10.1109/FREQ.2008.4622948
Filename
4622948
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