Title :
Growth-twinning in zincblende crystals: further insights from studies of liquid encapsulated Czochralski (LEC) grown InP single crystals
Author :
Chung, H. ; Dudley, M. ; Larson, D.J., Jr. ; Prasad, V. ; Hurle, D.T.J. ; Bliss, D.F.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
Abstract :
Synchrotron white beam X-ray topography (SWBXT) combined with chemical etching and Nomarski optical microscopy have been employed to investigate the phenomenon of twinning in sulfur doped, LEC grown ⟨100⟩ InP single crystals. Results confirm the general prediction of Hurle that twins nucleate in regions where {111} edge facets are anchored to the three phase boundary (TPB), and that twinning produces a {111} external facet on the shoulder region of the crystal. However, some specific aspects of Hurle´s theory were corrected by this experimental study. A detailed X-ray examination revealed the appearance of a {115} external shoulder facet immediately before the occurrence of twinning. The location at which the twin nucleates is the point where the {115} shoulder facet is converted to a {111} external shoulder facet. This twinning mechanism allows for a reduction in free energy by converting the facet from a {115} to a {111} plane
Keywords :
III-V semiconductors; X-ray topography; crystal growth from melt; etching; indium compounds; optical microscopy; semiconductor growth; sulphur; twinning; Hurle´s theory; InP:S; Nomarski optical microscopy; chemical etching; free energy; growth-twinning; liquid encapsulated Czochralski growth; single crystals; synchrotron white beam X-ray topography; three phase boundary; zincblende crystals; {111} edge facets; Chemicals; Crystals; Etching; Indium phosphide; Laboratories; Optical microscopy; Physics; Surface morphology; Surface topography; Synchrotrons;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712407
